Method of making split-gate non-volatile memory cells with erase gates disposed over word line gates

ABSTRACT

A memory device, and method of making the same, that includes a substrate of semiconductor material of a first conductivity type, first and second regions spaced apart in the substrate and having a second conductivity type different than the first conductivity type, with a first channel region in the substrate extending between the first and second regions, a first floating gate disposed over and insulated from a first portion of the first channel region adjacent to the second region, a first coupling gate disposed over and insulated from the first floating gate, a first word line gate disposed over and insulated from a second portion of the first channel region adjacent the first region, and a first erase gate disposed over and insulated from the first word line gate.

RELATED APPLICATIONS

This application is a divisional of U.S. application Ser. No. 17/165,934, filed Feb. 2, 2021, which claims priority to Chinese Patent Application No. 202011060967.0, filed Sep. 30, 2020, entitled “Split-Gate Non-Volatile Memory Cells With Erase Gates Disposed Over Word Line Gates, And Method Of Making Same.”

FIELD OF THE INVENTION

The present invention relates to non-volatile memory arrays, and more particularly to a split gate, memory cell design and method of manufacture.

BACKGROUND OF THE INVENTION

Split gate non-volatile memory cells, and arrays of such cells, are well known.

For example, U.S. Pat. No. 5,029,130 (“the '130 patent”) discloses an array of split gate non-volatile memory cells, and is incorporated herein by reference for all purposes. The memory cell is shown in FIG. 1. Each memory cell 110 includes source and drain regions 114/116 formed in a semiconductor substrate 112, with a channel region 118 there between. A floating gate 120 is formed over and insulated from (and controls the conductivity of) a first portion of the channel region 118, and over a portion of the drain region 116. A control gate 122 has a first portion 122 a that is disposed over and insulated from (and controls the conductivity of) a second portion of the channel region 118, and a second portion 122 b that extends up and over the floating gate 120. The floating gate 120 and control gate 122 are insulated from the substrate 112 by a gate oxide 126.

The memory cell is erased (where electrons are removed from the floating gate) by placing a high positive voltage on the control gate 122, which causes electrons on the floating gate 120 to tunnel through the intermediate insulation 123 from the floating gate 120 to the control gate 122 via Fowler-Nordheim tunneling.

The memory cell is programmed (where electrons are placed on the floating gate) by placing a positive voltage on the control gate 122, and a positive voltage on the drain region 116. Electron current will flow from the source region 114 towards the drain region 116. The electrons will accelerate and become heated when they reach the gap between the control gate 122 and the floating gate 120. Some of the heated electrons will be injected through the gate oxide 126 onto the floating gate 120 due to the attractive electrostatic force from the floating gate 120.

The memory cell is read by placing positive read voltages on the drain region 116 and control gate 122 (which turns on the channel region 118 under the control gate first portion 122 a). If the floating gate 120 is positively charged (i.e. erased of electrons and positively coupled to the drain region 116), then the portion of the channel region 118 under the floating gate 120 is turned on as well, and current will flow across the channel region 118, which is sensed as the erased or “1” state. If the floating gate 120 is negatively charged (i.e. programmed with electrons), then the portion of the channel region under the floating gate 120 is mostly or entirely turned off, and current will not flow (or there will be little flow) across the channel region 118, which is sensed as the programmed or “0” state. Those skilled in the art understand that the source and drain regions can be interchangeable, where the floating gate 120 can extend partially over the source region 114 instead of the drain region 116, as shown in FIG. 2.

Split gate memory cells having more than two gates are also known. For example, U.S. Pat. No. 8,711,636 (“the '636 patent”) discloses memory cells with an additional coupling gate disposed over and insulated from the source region, for better capacitive coupling to the floating gate. See for example FIG. 3 showing coupling gate 124 disposed over source region 14.

A four gate memory disclosed in U.S. Pat. No. 6,747,310 (“the '310 patent”). For example, as shown in FIG. 4, the memory cells have source region 114, drain region 116, floating gate 120 over a first portion of channel region 118, a select (word line) gate 128 over a second portion of the channel region 118, a control gate 122 over the floating gate 120, and an erase gate 130 over the source region 14. Programming is shown by heated electrons from the channel region 118 injecting themselves onto the floating gate 120. Erasing is shown by electrons tunneling from the floating gate 120 to the erase gate 130 by placing a positive voltage on the erase gate 130 (and optionally a negative voltage on the control gate 122). However, this configuration is not ideal because erase efficiency can be compromised by the high coupling ratio between the erase gate and the floating gate, and it can be complex to manufacture.

Conventional memory cell designs and methods of fabrication make it challenging to scale the memory cells down in size while maintaining or even enhancing performance, and streamlining fabrication processes.

BRIEF SUMMARY OF THE INVENTION

The aforementioned problems and needs are addressed by a method of forming memory cells includes forming a first insulation layer on a semiconductor substrate having a first conductivity type, forming a first conductive layer on the first insulation layer, forming a second insulation layer on the first conductive layer, forming a second conductive layer on the second insulation layer, forming a third insulation layer on the second conductive layer, forming a trench that extends through the third insulation layer, the second conductive layer, and the second insulation layer, forming insulation spacers along a sidewall of the trench, extending the trench through the first conductive layer between the insulation spacers, forming a first block of conductive material in the trench, wherein the first block of conductive material is disposed vertically over and insulated from the substrate and laterally adjacent to and insulated from the first conductive layer, forming first and second erase gates in the trench, wherein the first and second erase gates are disposed vertically over and insulated from the first block of conductive material, removing a portion of the first block of conductive material between the first and second erase gates, while maintaining first and second portions of the first block of conductive material as respective first and second word line gates, forming a first region in a portion of the substrate between the first and second word line gates and having a second conductivity type different than the first conductivity type, removing portions of the second conductive layer while maintaining first and second portions of the second conductive layer as respective first and second coupling gates, removing portions of the first conductive layer while maintaining first and second portions of the first conductive layer as respective first and second floating gates, and forming second and third regions in the substrate and having the second conductivity type, wherein the second region is adjacent to the first floating gate and the third region is adjacent to the second floating gate, wherein a first channel region in the substrate extends between the first and second regions and a second channel region in the substrate extends between the first and third regions. The first floating gate is disposed over and insulated from the substrate and laterally adjacent to and insulated from the first word line gate. The second floating gate is disposed over and insulated from the substrate and laterally adjacent to and insulated from the second word line gate. The first coupling gate is disposed over and insulated from the first floating gate. The second coupling gate is disposed over and insulated from the second floating gate. The first erase gate is disposed over and insulated from the first word line gate. The second erase gate is disposed over and insulated from the second word line gate.

Other objects and features of the present invention will become apparent by a review of the specification, claims and appended figures.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross sectional view of a conventional two-gate memory cell.

FIG. 2 is a cross sectional view of a conventional two-gate memory cell.

FIG. 3 is a cross sectional view of a conventional three-gate memory cell.

FIG. 4 is a cross sectional view of a conventional four-gate memory cell.

FIGS. 5A-5F are side cross section views showing the steps in forming a pair of memory cells according to the present invention.

FIG. 6 is a side cross section view showing the final structure of the pair of memory cells of the present invention.

FIGS. 7A-7B are side cross section views showing the steps in forming a pair of memory cells according to an alternate embodiment of the present invention.

FIG. 8 is a plan view showing control circuitry used to operate an array of memory cells of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

The present invention is a memory cell design, architecture and method of manufacture of a split-gate, memory cell design. Referring to FIGS. 5A-5F, there are shown cross-sectional views of the steps in the process to make a memory cell. While only the formation of a pair of memory cells is shown in the figures, it should be understood that an array of such memory cell pairs are formed concurrently when forming a memory device containing an array of such memory cells. The process begins by forming a first insulation layer 12 (e.g. layer of silicon dioxide, also referred to herein as oxide layer 12) on the top surface 10 a of a substrate 10 of semiconductor material (e.g., single crystalline silicon). Thereafter, a first conductive layer 14 (e.g. polysilicon (also referred to herein as “poly”) or amorphous silicon) is formed on the oxide layer 12. A second insulation layer 16 is formed on first conductive layer 14. Preferably, second insulation layer 16 is an ONO layer, meaning it has oxide-nitride-oxide sublayers. A second conductive layer 18 (e.g. polysilicon or amorphous silicon) is formed on second insulation layer 16. A third insulation layer 20 (e.g. silicon nitride—referred to herein as “nitride”) is formed on second conductive layer 18. Photoresist material (not shown) is coated on the structure, and a photolithography masking step is performed exposing selected portions of the photoresist material. The photoresist is developed such that portions of the photoresist are removed. Using the remaining photoresist as a mask, the structure is etched. Specifically, third insulation layer 20, second conductive layer 18 and second insulation layer 16 are anisotropically etched (using conductive layer 14 as an etch stop), leaving a trench 22 extending through third insulation layer 20, second conductive layer 18 and second insulation layer 16. The resulting structure is shown in FIG. 5A (after photoresist removal).

Insulation spacers 24/26 (e.g., ON—oxide and nitride, respectively) spacers 24/26 are formed along the sidewalls of trench 22. Formation of spacers is well known in the art, and involves the deposition of a material over the contour of a structure, followed by an anisotropic etch process, whereby the material is removed from horizontal surfaces of the structure, while the material remains largely intact on vertically oriented surfaces of the structure (with a rounded upper surface, not shown). Insulation (ON) spacers 24/26 are formed by oxide deposition, nitride deposition, and then nitride anisotropic etch and oxide anisotropic etch. Oxide spacers 28 are then formed in trench 22 by oxide deposition followed by oxide anisotropic etch. An anisotropic etch is then performed to remove the exposed portion of first conductive layer 14 below the area located between oxide spacers 28, as shown in FIG. 5B, deepening trench 22. An implantation may be performed at this time (through oxide layer 12 at the bottom of trench 22 and into the portion of the substrate 10 underneath (which will eventually be the word line portion of the channel region as described further below).

Oxide spacers 30 are next formed along the sidewalls of trench 22 (including along the exposed sidewalls of first conductive layer 14 and adjacent oxide spacers 28) by oxide deposition and anisotropic oxide etch. This spacer formation, particularly the anisotropic oxide etch which removes the portion of oxide layer 12 at the bottom of trench 22, leaves the portion of the substrate surface 10 a between oxide spacers 30 exposed. Oxide layer 32 is formed on this exposed portion of the substrate surface 10 a at the bottom of trench 22, preferably by thermal oxidation. Also preferably oxide layer 32 has a thickness that is less than that of oxide layer 12. A first block of conductive material 34 is formed on oxide layer 32 inside trench 22 by material deposition, a chemical mechanical polish (CMP) using third insulation layer 20 as a stop layer, and etch back. Preferably, the first block of conductive material 34 is formed of polysilicon, and the top surface of the first block of conductive material 34 is below the top surface of the first conductive layer 14. The first block of conductive material 34 is laterally adjacent to, and insulated from, first conductive layer 14 by oxide spacers 30. An implantation can be performed to dope the first block of conductive material 34 should polysilicon be used for the first block of conductive material 34. The resulting structure is shown in FIG. 5C.

An oxide etch (e.g., wet etch) is used to remove the upper portions of oxide spacers 30 (above the first block of conductive material 34) and all of oxide spacers 28. An oxide layer 36 is then formed over the structure by oxide deposition. Second and third blocks of conductive material 38 a/38 b are formed on oxide layer 36 inside trench 22 by material deposition and etch. Preferably, second and third blocks of conductive material 38 a/38 b are a pair of spaced apart spacers formed by polysilicon deposition and anisotropic etch, leaving the portion of oxide layer 36 between the second and third blocks of conductive material 38 a/38 b exposed. An oxide etch is used to remove the exposed portion of oxide layer 36 at the bottom of the trench 22 between the second and third blocks of conductive material (e.g., by anisotropic etch), leaving a portion of the first block of conductive material 34 exposed. An etch is then used to remove the exposed (middle) portion of the first block of conductive material 34, resulting in fourth and fifth blocks of conductive material 34 a/34 b remaining from the first block of conductive material 34. The resulting structure is shown in FIG. 5D.

An implantation is then performed to form drain region 40 in the substrate 10 between the fourth and fifth blocks of conductive material 34 a/34 b. Drain region 40 is a first region in the substrate 10 having a conductivity type different from that of the substrate 10 in the vicinity of the drain region 40. Photoresist material 42 is coated on the structure, and a photolithography masking step is performed exposing selected portions of the photoresist material. The photoresist material 42 is developed such that portions of the photoresist material 42 are removed (except for photoresist material 42 in trench 22, over the second and third blocks of conductive material 38 a/38 b, over layer 36, over spacers 24/26, and over portions of third insulation layer 20 adjacent the second and third blocks of conductive material 38 a/38 b). Using the remaining photoresist material 42 as a mask, the structure is etched to remove the exposed portions of third insulation layer 20, second conductive layer 18, second insulation layer 16 and first conductive layer 14, as shown in FIG. 5E. An implantation is then performed to form first and second source regions 44 a and 44 b in the substrate 10 adjacent the outer edges first conductive layer 14. First and second source regions 44 a/44 b are second and third regions in the substrate that have the same conductivity type as that of drain region 40 (i.e., different from that of the substrate 10 in the vicinity of the first and second source regions 44 a/44 b), and extend partially under the respective adjacent first conductive layer 14. For example, the substrate 10 in the vicinity of first and second source regions 44 a/44 b and drain region 40 can be P type conductivity, and the first and second source regions 44 a/44 b and drain region 40 can be N type conductivity, and vice-versa. After removing photoresist 42, insulation spacers 48 (e.g., nitride) can be formed on the sides of the structure, as shown in FIG. 5F.

The resulting memory cells are best shown in FIG. 6, where a pair of memory cells, i.e. memory cells 50 and 52, are formed sharing a common drain region 40. For memory cell 50, a first channel region 46 a is defined in the substrate 10 by, and extends between, first source region 44 a and the drain region 40. A first floating gate 14 a (a first block of material remaining from first conductive layer 14) is disposed over and insulated from a first portion of the first channel region 46 a (for controlling the conductivity thereof) adjacent first source region 44 a, and preferably the first floating gate 14 a is partially disposed over and insulated from first source region 44 a by a respective remaining portion of oxide layer 12. A first coupling gate 18 a (a first block of material remaining from second conductive layer 18) is disposed over and insulated from the first floating gate 14 a by a respective remaining portion of second insulation layer 16 (for voltage coupling to the floating gate 14 a). The fourth block of conductive material 34 a is a first word line gate that is disposed vertically over and insulated from a second portion of the first channel region 46 a (for controlling the conductivity thereof), and is laterally adjacent to and insulated from the first floating gate 14 a by a respective remaining portion of oxide spacer 30. The second block of conductive material 38 a is a first erase gate that is disposed vertically over and insulated from the first word line gate 34 a by a respective remaining portion of oxide layer 36, and laterally adjacent to and insulated from the first coupling gate 18 a by a combination of respective remaining portions of oxide layer 36 and insulation spacers 24, 26. The first erase gate 38 a includes a notch 38 c facing an edge 14 c of the first floating gate 14 a. Insulation block 20 a (block of material remaining from insulation layer 20) is disposed over first coupling gate 18 a.

For memory cell 52, a second channel region 46 b is defined in the substrate 10 by, and extends between, source region 44 b and the drain region 40. A second floating gate 14 b (a second block of material remaining from first conductive layer 14) is disposed over and insulated from a first portion of the second channel region 46 b (for controlling the conductivity thereof) adjacent source region 44 b, and preferably the second floating gate 14 b is partially disposed over and insulated from second source region 44 b by a respective remaining portion of oxide layer 12. A second coupling gate 18 b (a second block of material remaining from second conductive layer 18) is disposed over and insulated from the second floating gate 14 b by a respective remaining portion of second insulation layer 16 (for voltage coupling to the floating gate 14 b). The fifth block of conductive material 34 b is a second word line gate that is disposed vertically over and insulated from a second portion of the second channel region 46 b (for controlling the conductivity thereof), and is laterally adjacent to and insulated from the second floating gate 14 b by a respective remaining portion of oxide spacer 30. The third block of conductive material 38 b is a second erase gate that is disposed vertically over and insulated from the second word line gate 34 b by a respective remaining portion of oxide layer 36, and laterally adjacent to and insulated from the second coupling gate 18 b by a combination of respective remaining portions of oxide layer 36 and insulation spacers 24, 26. The second erase gate 38 b includes a notch 38 c facing an edge 14 c of the second floating gate 14 b. Insulation block 20 b (block of material remaining from insulation layer 20) is disposed over second coupling gate 18 b

Table 1 below illustrates exemplary operational voltages and currents for program, read and erase operations of the memory cells 50 and 52.

TABLE 1 EG EG WLG WLG CG CG Source Source Drain 38a 38b 34a 34b 18a 18b 44a 44b 40 Program 4.5 V 0 V 1.0 V 0 V 10.5 V 0 V 4.5 V 0 V −1 uA Cell 50 Program 0 V 4.5 V 0 V 1.0 V 0 V 10.5 V 0 V 4.5 V −1 uA Cell 52 Read 0 V 0 V Vcc 0 V Vcc 0 V 0 V 0 V Vblr Cell 50 Read 0 V 0 V 0 V Vcc 0 V Vcc 0 V 0 V Vblr Cell 52 Erase 11.5 V 0 V 0 V 0 V 0 V 0 V 0 V 0 V 0 V Cell 50 Erase 0 V 11.5 V 0 V 0 V 0 V 0 V 0 V 0 V 0 V Cell 52 Vcc can be, for example, 0.9˜3.3V. Vblr can be, for example, 0.5˜1.1V.

Programming memory cell 50 (i.e., programming first floating gate 14 a with electrons) stores a first bit of information, and programming memory cell 52 (i.e., programming second floating gate 14 b with electrons) stores a second bit of information. To program memory cell 50, a positive voltage of 4.5 V is applied to first erase gate 38 a, a positive voltage of 1 V is applied to first word line gate 34 a, a positive voltage of 10.5 V is applied to first coupling gate 18 a, a positive voltage of 4.5 V is applied to first source region 44 a, and a current of −1 uA is applied to the drain region 40. Electrons travel from drain region 40 toward first source region 44 a in first channel region 46 a, and inject themselves onto first floating gate 14 a because of the positive voltage capacitively coupled to first floating gate 14 a by first coupling gate 18 a. Memory cell 52 is similarly programmed using the combination of voltages and current in Table 1.

To erase memory cell 50 (i.e., erasing first floating gate 14 a by removing electrons therefrom), a positive voltage of 11.5 V is applied to the first erase gate 38 a, which causes electrons to tunnel through the insulation layer 36 from the first floating gate 14 a to the first erase gate 38 a. Memory cell 52 is similarly erased by applying a positive voltage of 11.5 V to second erase gate 38 b. Notches 38 a facing edges 14 c enhance the efficiency of this tunneling.

To read memory cell 50 (i.e., reading first floating gate 14 a by determining the status of electrons thereon), positive voltages of Vcc (e.g., 0.9-3.3 V) are applied to first word line gate 34 a and first coupling gate 18 a, and a positive voltage of Vblr (e.g., 0.5-1.1 V) is applied to the drain region 40. Current will flow through the first channel region 46 a if memory cell 50 is erased (i.e., first floating gate 14 a is in an erased state and thus will have a positive voltage due to positive charge on first floating gate 14 a after erasing and small voltage coupling from word line gate 34 a and therefore the portion of the first channel region 46 a under first floating gate 14 a is turned on). Current is sensed as an erased stated. Current is reduced or will not flow through the first channel region 46 a if first floating gate 14 a is programmed (i.e. is programmed with electrons sufficient to prevent turning on the portion of the first channel region 46 a under floating gate 14 a). The low or no current is sensed as a programmed state. Memory cell 52 is similarly read using the combination of voltages in Table 1.

The formation and resulting structure of memory cells 50 and 52 have many advantages. The insulation (i.e., oxide layer 32) under the first and second word line gates 34 a/34 b can be much thinner than the insulation (i.e., oxide layer 12) under the first and second floating gates 14 a/14 b, for higher performance especially for high speed applications. The insulation (i.e., oxide layer 36) between the first and second floating gates 14 a/14 b and the first and second erase gates 38 a/38 b can be thinner than the insulation (i.e., oxide spacer 30) between the first and second floating gates 14 a/14 b and the first and second word line gates 34 a/34 b. The erase performance is enhanced because of the relatively low voltage coupling ratio between the first and second erase gates 38 a/38 b and the first and second floating gates 14 a/14 b (because only the corner regions of first and second erase gates 38 a/38 b (with notches 38 c) are in close proximity to the corner regions (with edges 14 c) of the first and second floating gates 14 a/14 b). Only two photolithography masking steps are needed to define the structure, one for forming trench 22, and one for etching through conductive layers 18 and 14 to complete the formation of first and second coupling gates 18 a/18 b and first and second floating gates 14 a/14 b. Both word line gates 34 a/38 b and first and second erase gates 38 a/38 b are self-aligned to the first and second floating gates 14 a/14 b. This self-alignment provide better control over the lengths of the first and second channel regions 46 a/46 b. Finally, the ability to scale the memory cells 50/52 to smaller sizes is facilitated by having the first and second coupling gates 18 a/18 b disposed over the first and second floating gates 14 a/14 b respectively, and having the first and second erase gates 38 a/38 b disposed over the first and second word line gates 34 a/34 b respectively.

FIGS. 7A-7B illustrate an alternate embodiment for forming the memory cells 50/52, which starts with the structure of FIG. 5A. The above processing steps described with respect to FIG. 5B are performed, except the formation of oxide spacers 28 is omitted, resulting in the structure shown in FIG. 7A. Then, the remaining processing steps described above with respect to FIGS. 5C-5F are performed (except that the oxide spacers 28 are not removed because they were never formed), resulting in the final structure shown in FIG. 7B. The primary difference between this final structure and that of FIG. 6 is that notches are not formed in the erase gate. Instead, nitride spacers 26 are aligned with the sides of first and second floating gates 14 a/14 b, which means the sidewalls of trench 22 are planar when first and second erase gates 38 a/38 b are formed. Even though the lack of notches in the first and second erase gates 38 a/38 b may reduce erase efficiency, the memory cells 50/52 may be scaled down in size more than if the notches are formed and the lack of notches will reduce capacitive coupling between the first and second erase gates 38 a/38 b and the first and second floating gates 14 a/14 b.

Control circuitry 96 preferably (but not necessarily) formed on the same substrate 10 (as shown in FIG. 8) is configured to program, read and erase an array 98 of the memory cells 50 or 52 described herein by applying the voltages of Table 1 as described above.

It is to be understood that the present invention is not limited to the embodiment(s) described above and illustrated herein, but encompasses any and all variations falling within the scope of the appended claims. For example, references to the present invention herein are not intended to limit the scope of any claim or claim term, but instead merely make reference to one or more features that may be covered by one or more of the claims. Materials, processes and numerical examples described above are exemplary only, and should not be deemed to limit the claims. Further, as is apparent from the claims and specification, not all method steps need be performed in the exact order illustrated or claimed, but rather in any order that allows the proper formation of the memory cell array of the present invention. Lastly, single layers of material could be formed as multiple layers of such or similar materials, and vice versa.

It should be noted that, as used herein, the terms “over” and “on” both inclusively include “directly on” (no intermediate materials, elements or space disposed there between) and “indirectly on” (intermediate materials, elements or space disposed there between). Likewise, the term “adjacent” includes “directly adjacent” (no intermediate materials, elements or space disposed there between) and “indirectly adjacent” (intermediate materials, elements or space disposed there between), “mounted to” includes “directly mounted to” (no intermediate materials, elements or space disposed there between) and “indirectly mounted to” (intermediate materials, elements or spaced disposed there between), and “electrically coupled” includes “directly electrically coupled to” (no intermediate materials or elements there between that electrically connect the elements together) and “indirectly electrically coupled to” (intermediate materials or elements there between that electrically connect the elements together). For example, forming an element “over a substrate” can include forming the element directly on the substrate with no intermediate materials/elements there between, as well as forming the element indirectly on the substrate with one or more intermediate materials/elements there between. 

What is claimed is:
 1. A method of forming memory cells, comprising: forming a first insulation layer on a semiconductor substrate having a first conductivity type; forming a first conductive layer on the first insulation layer; forming a second insulation layer on the first conductive layer; forming a second conductive layer on the second insulation layer; forming a third insulation layer on the second conductive layer; forming a trench that extends through the third insulation layer, the second conductive layer, and the second insulation layer; forming insulation spacers along a sidewall of the trench; extending the trench through the first conductive layer between the insulation spacers; forming a first block of conductive material in the trench, wherein the first block of conductive material is disposed vertically over and insulated from the substrate and laterally adjacent to and insulated from the first conductive layer; forming first and second erase gates in the trench, wherein the first and second erase gates are disposed vertically over and insulated from the first block of conductive material; removing a portion of the first block of conductive material between the first and second erase gates, while maintaining first and second portions of the first block of conductive material as respective first and second word line gates; forming a first region in a portion of the substrate between the first and second word line gates and having a second conductivity type different than the first conductivity type; removing portions of the second conductive layer while maintaining first and second portions of the second conductive layer as respective first and second coupling gates; removing portions of the first conductive layer while maintaining first and second portions of the first conductive layer as respective first and second floating gates; and forming second and third regions in the substrate and having the second conductivity type, wherein the second region is adjacent to the first floating gate and the third region is adjacent to the second floating gate, wherein a first channel region in the substrate extends between the first and second regions and a second channel region in the substrate extends between the first and third regions; wherein: the first floating gate is disposed over and insulated from the substrate and laterally adjacent to and insulated from the first word line gate, the second floating gate is disposed over and insulated from the substrate and laterally adjacent to and insulated from the second word line gate, the first coupling gate is disposed over and insulated from the first floating gate, the second coupling gate is disposed over and insulated from the second floating gate, the first erase gate is disposed over and insulated from the first word line gate, and the second erase gate is disposed over and insulated from the second word line gate.
 2. The method of claim 1, wherein: the first word line gate is disposed laterally adjacent to and insulated from the first floating gate; the first erase gate is disposed laterally adjacent to and insulated from the first coupling gate; the second word line gate is disposed laterally adjacent to and insulated from the second floating gate; and the first erase gate is disposed laterally adjacent to and insulated from the first coupling gate.
 3. The method of claim 1, wherein before the forming of the first and second erase gate, the method further comprising: removing at least one of the insulation spacers from along the sidewall of the trench.
 4. The method of claim 3, wherein the first erase gate includes a notch facing an edge of the first floating gate, and the second erase gate includes a notch facing an edge of the second floating gate.
 5. The method of claim 1, wherein the first floating gate is partially disposed over and insulated from the second region, and the second floating gate is partially disposed over and insulated from the third region.
 6. The method of claim 1, wherein insulation between the word line gate and the substrate is thinner than insulation between the first and second floating gates and the substrate.
 7. The method of claim 1, wherein insulation between the erase gate and the first and second floating gates is thinner than insulation between the word line gate and the first and second floating gates.
 8. The method of claim 1, wherein the forming of the first and second erase gates comprises: depositing polysilicon in the trench; and performing an anisotropic etch, where the first and second erase gates are spaced apart spacers of the polysilicon. 